High frequency bridge driver

The MAX/MAX high-frequency, V half-bridge, n-channel MOSFET drivers drive high- and low-side MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from . 8 rows · The MAX/MAX/MAX high-frequency, V half-bridge, n-channel MOSFET drivers drive. The MP is a high-frequency, V, half-bridge, N-channel, power MOSFET driver. Its low-side and high-side driver channels are independently controlled and matched with less than 5ns in time delay. Under-voltage lockout on both high-side and low-side supplies force their outputs low in case of insufficient supply. The.

Description. The MAX/MAX high-frequency, V half-bridge, n-channel MOSFET drivers drive high- and low-side MOSFETs in high-voltage applications. These drivers are independently controlled and their 35ns typical propagation delay, from input to output, are matched to within 2ns (typ). The high-voltage operation with very low and matched propagation delay between drivers, and high source/sink current capabilities make these devices suitable for the high-power, high-frequency. The HIPA is a member of the HIPx family of High Frequency H-Bridge Driver ICs. A simplified application diagram of the HIPA IC is shown in Figure 1. The HIPx family of H-Bridge driver ICs provide the ability to operate from 10VDC to 80VDC busses for driving H-Bridges, whose switch elements are comprised of power N-Channel MOSFETs. high-frequency, V half-bridge, n-channel MOSFET drivers drive high- and low-side MOSFETs in high-volt-age applications. These drivers are independently con-trolled, and their 35ns (typ) propagation delay, from input to output, are matched to within 2ns (typ). The high-volt-age operation with very low and matched propagation delay between drivers, and high source-/sink-current.

The MPA is a high-frequency, half-bridge, N-channel power MOSFET driver. Its low-side and high-side driver channels are controlled independently and. 8 oct. Full bridge driver circuit. • Integrated bootstrap diodes. • Integrated high voltage level shift function. • High voltage input for the internal. TI half-bridge drivers for MOSFET and IGBTs offer fast switching frequencies, high negative voltage handling and wide operating temperatures.